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K3878 2SK3878 TO-3P MOSFET 900V 9A
K3878 (2SK3878) N-Channel Power MOSFET
The K3878 (2SK3878) is a high-performance N-channel power MOSFET with a 900V drain-source voltage rating and 9A continuous current rating. Packaged in the industry-standard TO-3P through-hole package, it features low on-resistance and fast switching characteristics, making it ideal for high-power switching applications.
This MOSFET is RoHS compliant, delivering reliable thermal stability and electrical performance in demanding environments. It is widely used in switch-mode power supplies, welding machine power circuits, inverters, motor drives, and industrial power control systems, serving as a key component for high-voltage and high-power electronic designs.
Key Highlights
- 900V high-voltage N-channel power MOSFET
- 9A continuous drain current, 27A peak current
- TO-3P package with excellent heat dissipation
- Low RDS(on) for minimal power loss
- RoHS compliant for eco-friendly manufacturing
- Applied in SMPS, welding equipment, inverters and industrial power systems
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K3878 (2SK3878) N-Channel Power MOSFET – Product Brief
The K3878 (2SK3878) is a high-voltage N-channel enhancement-mode power metal-oxide-semiconductor field-effect transistor (MOSFET), designed specifically for high-power switching and power control applications in industrial and consumer electronic systems. Engineered with robust thermal and electrical performance, it is a core component for high-voltage power conversion and switching circuits.
Core Specifications
表格
| Parameter | Value | Condition |
|---|---|---|
| Device Type | N-Channel Enhancement-Mode MOSFET | – |
| Drain-Source Voltage (VDSS) | 900 V (Max) | – |
| Continuous Drain Current (ID) | 9 A | TC = 25 °C |
| Pulse Drain Current (IDP) | 27 A | – |
| On-Resistance (RDS(on)) | 1.0 Ω (Typical) | VGS = 10 V, ID = 5 A |
| Total Power Dissipation (PD) | 150 W | TC = 25 °C |
| Gate Threshold Voltage (VGS(th)) | 2.0 ~ 4.0 V (Typical) | ID = 250 μA |
| Drain-Source Leakage Current (IDSS) | 100 μA (Max) | VDS = 720 V, VGS = 0 V |
| Package Type | TO-3P (Through-Hole Package) | Heat-sink compatible |
| Environmental Compliance | RoHS Compliant | – |
Key Features
- High Voltage & Current Capability: Supports a maximum drain-source voltage of 900 V and continuous drain current of 9 A, meeting the demands of high-power switching applications.
- Low Conduction Loss: Low on-resistance reduces power dissipation and improves overall energy efficiency in power circuits.
- Fast Switching Performance: Optimized gate structure enables high-frequency switching, suitable for modern power electronic systems.
- Superior Thermal Management: TO-3P package with large heat-dissipation area ensures stable operation under high-power conditions.
- Reliable Operation: Designed to withstand harsh industrial environments, with excellent electrostatic discharge (ESD) protection and long-term durability.
Typical Applications
- Switch-mode power supplies (SMPS) and DC-DC converters for industrial equipment
- High-voltage inverter and motor drive systems
- Power circuits for welding machines and plasma cutting equipment
- Uninterruptible power supplies (UPS) and industrial power control modules
- High-voltage switching circuits and audio power amplification systems