FQD13N10 100V N-Channel Enhancement Mode Power MOSFET

The FQD13N10 is an N-channel enhancement-mode power MOSFET manufactured by ON Semiconductor, belonging to the QFET® series. It is commonly used in low-to-medium voltage, medium-power switching and drive applications.

FQD13N10
I. Core Parameters (Official FQD13N10TM)

Type: N-Channel Enhancement Mode

Package: TO-252AA (DPAK/SC-63), 3-pin Surface Mount

Drain-Source Voltage VDS: 100V

Continuous Drain Current ID: 10A @ 25℃ (Tc)

On-Resistance RDS (on): Max 180mΩ @ VGS=10V, ID=5A

Gate Threshold Voltage VGS (th): Typical 2V @ 250µA

Gate-Source Voltage VGS: ±20V

Gate Charge Qg: Typical 12nC

Power Dissipation PD: 2.5W (Ta) / 40W (Tc)

Operating Temperature: -55℃ ~ +150℃

RoHS: Compliant, Lead-Free

II. Main Features
Utilizes planar stripe design with DMOS Technology: Low on-resistance, low gate charge

100% avalanche testing, strong surge protection

Suitable for SMT surface mount technology, good heat dissipation

General purpose, affordable price, stable supply

III. Typical Applications

Switching power supplies (AC-DC/DC-DC)

Motor drives (DC motors, fans)

LED lighting drivers

Electric vehicle controllers, inverters

Various medium-power switching circuits

IV. Model Description

FQD13N10: Basic model

FQD13N10TM: Standard TO-252

FQD13N10LTM: Low gate charge version (L=Low Qg)

V. Commonly Used Alternative Models (similar parameters)

FQD12N10, FQD16N10 (same series)

IRLIZ44N, IRFZ44N (100V N-channel)

STD10NF10T4, SUD20N10