+86 139 2233 0292
D92-02 TO-3P MOSFET 20A 200V
D92-02 N-Channel Power MOSFET
The D92-02 is a high-voltage, high-current N-channel power MOSFET with a 200 V drain-source rating and 20 A continuous drain current. Packaged in the industry-standard TO-3P through-hole package, it features ultra-low on-resistance and fast switching characteristics, delivering exceptional efficiency and reliability in high-power switching applications.
This MOSFET is RoHS compliant, with excellent thermal dissipation and surge current capability, making it ideal for welding equipment, power supplies, inverters, UPS systems, and industrial power control circuits. Its low conduction loss and fast recovery performance reduce energy waste, making it a cost-effective solution for demanding power electronic designs.
Key Highlights
- 200 V / 20 A N-channel power MOSFET
- TO-3P package for heat-sink compatible mounting
- Ultra-low RDS(on) for minimal power loss
- Fast switching and high surge current tolerance
- RoHS compliant for eco-friendly production
- Widely used in welding machines, PFC circuits, and industrial power systems
Share to:
Facebook
X
LinkedIn
WhatsApp
D92-02 N-Channel Power MOSFET
The D92-02 is a high-performance N-channel enhancement-mode power MOSFET designed for high-current, high-efficiency switching applications in industrial power systems, welding equipment, and power conversion circuits. Engineered with advanced semiconductor processes, it delivers low conduction loss, fast switching speed, and robust thermal stability, making it a core component for high-power DC/DC converters, inverters, and load switching circuits.
Absolute Maximum Ratings (Ta=25°C unless specified)
| Parameter | Symbol | Value | Test Condition |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 200 V | – |
| Continuous Drain Current | ID | 20 A | – |
| Pulse Drain Current | IDP | 40 A | – |
| Total Power Dissipation | PD | 150 W | Tc=25°C |
| Gate-Source Voltage | VGSS | ±30 V | – |
| Operating Junction Temperature | Tj | -55 ~ +150 °C | – |
| Storage Temperature | Tstg | -65 ~ +150 °C | – |
Electrical Characteristics (Typical/Max)
- On-Resistance (RDS(on)): < 20 mΩ @ VGS=10 V, ID=10 A
- Gate Threshold Voltage (VGS(th)): 2.0 ~ 4.0 V
- Drain-Source Leakage Current (IDSS): < 100 μA @ VDS=180 V, VGS=0 V
- Total Gate Charge (Qg): Optimized for high-frequency operation
- Reverse Recovery Time (trr): Fast recovery for low switching loss
Key Features
- High Power Handling: 200 V VDSS and 20 A continuous ID support high-current industrial applications.
- Low Conduction Loss: Ultra-low RDS(on) minimizes power dissipation and improves system efficiency.
- Fast Switching Performance: Optimized gate structure enables high-frequency operation, reducing EMI and switching losses.
- Thermal Robustness: TO-3P through-hole package with large heat-dissipation area, compatible with heat sinks for high-power operation.
- Environmental Compliance: RoHS compliant, meeting green manufacturing standards.
Typical Applications
- High-current power switching circuits (welding machines, plasma cutters)
- DC-DC converters, UPS systems, and industrial inverters
- Freewheeling, snubber, and clamp circuits in power electronics
- Power factor correction (PFC) and chopper circuits
- Ultrasonic cleaning equipment and plating power supplies